INTERNSHIP R&D ENGINEER - Online measurement of SiC MOSFET electrical parameters

SuperGrid Institute brings together 180 employees, of 28 different nationalities who work together within a dynamic environment in the city of Lyon. As an independent research and innovation centre, we are dedicated to developing technologies for the future power transmission system, the “supergrid”, including HVDC & MVDC technologies.

As a multi-disciplinary research centre with advanced simulation capabilities & multiple test platforms, including numerous associated laboratories, SuperGrid Institute uses its comprehensive expertise to provide a wide range of services and solutions to support our customers in developing power systems, equipment, and components. We specialise in system architecture and work on ensuring network security and stability while allowing for the integration of intermittent renewable energy sources. Find out more by visiting our website: www.supergrid-institute.com

General Context

SiC MOSFETs have revolutionized power energy conversion above 600 V with their lower on-state resistance and higher switching frequency compared to Silicon IGBTs. Their maturity is growing strong, and manufacturers are integrating this technology ever more. Nonetheless, condition and health monitoring of these “new” devices is required to fully exploit their potential in power conversion. This research field is thus gaining momentum and is pushing both academia and industry to seek solutions for electrical parameter online measurement and remaining useful life estimation. Electrical parameter measurement is the first step towards condition & health monitoring but is a challenging task as it has to be carried out during the operation of the converter in most cases. On-line measurement of SiC MOSFETs’ electrical parameters is thus the goal of this internship.